The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Feb. 26, 2004
Nobuhiro Nishikawa, Kyoto, JP;
Koichi Inoue, Kyoto, JP;
Nobuhiro Nishikawa, Kyoto, JP;
Koichi Inoue, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor integrated circuit device has a MOS transistor Mincluding a parasitic diode Dxfor preventing a reverse current due to a parasitic diode Dxof a MOS transistor M. The semiconductor integrated circuit device further has a voltage setting circuitfor turning the MOS transistor Moff in a reversely biased state, and an anti-reverse-current elementfor preventing a reverse current from flowing through the voltage setting circuitin a reversely biased state. In normal operation, a direct-current voltage within the withstand voltage range of the MOS transistor Mis fed to the gate thereof according to the voltage applied to the conductive terminalof the MOS transistor M