The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Jul. 15, 2003
Applicants:
Scott Robert Summerfelt, Garland, TX (US);
Katsushi Boku, Dallas, TX (US);
Inventors:
Scott Robert Summerfelt, Garland, TX (US);
Katsushi Boku, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L031/062 ; H01L031/113 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
Ferroelectric memory cells and fabrication methods are provided in which the memory cell comprises a ferroelectric capacitor in a capacitor layer above a semiconductor body, and a cell transistor with first and second source/drains formed in an active region of the semiconductor body. The active region extends along a first axis in the semiconductor body, and the cell includes a gate electrically coupled with a wordline structure that extends along a second axis, wherein the first axis and the second axis are oblique.