The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Feb. 23, 2001
Yuta Tezen, Aichi, JP;
Yuta Tezen, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A sapphire substrateis etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layerhaving a thickness of approximately 40 nm is formed mainly on the upper surface and the bottom surface of the trenches of the substrate. Then a GaN layeris formed through vertical and lateral epitaxial growth. At this time, lateral epitaxial growth of the buffer layer, which was mainly formed on the upper surface of the trenches, filled the trenches and thus establishing a flat top surface. The portions of the GaN layerformed above the top surfaces of the mesas having a depth of 10 μm exhibited significant suppression of threading dislocation in contrast to the portions formed above the bottoms of the trenches.