The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Oct. 11, 2002
Applicants:
Yoshio Kaneko, Chiba, JP;
Yoshinori Tokura, Tokyo, JP;
Shigeki Miyasaka, Tokyo, JP;
Inventors:
Assignee:
Japan Science and Technology Agency, Kawaguchi, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B015/20 ;
U.S. Cl.
CPC ...
Abstract
A manufacturing method of a GaFeOcrystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (), which are disposed at an upper and a lower position and which are composed of GaFeO, are heated in a gas atmosphere with halogen lamps () disposed at confocal areas so as to form a floating melting zone between the ends of the material bars () which are disposed at the upper and the lower position and which are composed of GaFeO, GaFeOa single crystal having an orthorhombic crystal structure is formed.