The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2005

Filed:

Apr. 24, 2001
Applicants:

Brian W. Curran, Saugerties, NY (US);

Lisa Bryant Lacey, Clinton Corners, NY (US);

Gregory A. Northrop, Putnam Valley, NY (US);

Ruchir Puri, New Rochelle, NY (US);

Leon Stok, Croton-on-Hudson, NY (US);

Inventors:

Brian W. Curran, Saugerties, NY (US);

Lisa Bryant Lacey, Clinton Corners, NY (US);

Gregory A. Northrop, Putnam Valley, NY (US);

Ruchir Puri, New Rochelle, NY (US);

Leon Stok, Croton-on-Hudson, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F017/50 ;
U.S. Cl.
CPC ...
Abstract

A high-performance gate library is augmented with tapered gates. The widths of the stacked devices are varied to reduce the delay through some of the input pins. For example in a tapered NAND gate the bottom devices in the NFET stack are have longer widths than the top device to achieve smaller top input to output pin delay at the expense of larger bottom input to output pin delay. The method of using synthesis algorithms modifies the input net to gate pin connections and swaps traditional non-tapered gates with tapered gates to improve the delay of the timing critical paths. The latest arriving gate input net is swapped with the net connected to the top pin. The gate is then converted to a tapered gate provided the paths through the bottom gate input(s) that are not timing critical.


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