The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Nov. 23, 1998
Sumith V. Bandara, Valencia, CA (US);
Sarath D Gunapala, Valencia, CA (US);
Sumith V. Bandara, Valencia, CA (US);
Sarath D Gunapala, Valencia, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A quantum well can be designed to detect light of a particular wavelength by tailoring the potential depth and width of the well. The design produces two energy states in the well separated by the desired photon energy. The GaAs/AlGaAs material system allows the quantum well shape to be varied over a range wide enough to enable light detection at wavelengths longer than approximately 6 μm. Hence, large bandgap materials such as GaAs/AlGaAs material has made fabrication of a large focal plane arrays tuned to detect light at wavelengths from 6 to 25 μm possible.