The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Oct. 14, 2003
Yaojian Leng, Plano, TX (US);
Honglin Guo, Plano, TX (US);
Joe W. Mcpherson, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the invention is a method to reduce light induced corrosion and re-deposition of a metal,, (such as copper) that is used to make the interconnect wiring during the semiconductor manufacturing process. The light induced corrosion and re-deposition is caused by the exposure of a P-N junction to light, causing a photovoltaic effect. A photon-blocking layer,, is used in the invention to reduce the amount of exposure of the P-N junction to light. The photon blocking layer,, of the invention may be a direct band-gap material with a band-gap energy that is less than the lower edge of the energy spectrum of a typical light source used in the semiconductor manufacturing facility (typically less than 1.7 eV).