The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6965117 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 15, 2005

Filed:

Jan. 23, 2004
Applicant:

Tatumi Hiramoto, Tokyo, JP;

Inventor:

Tatumi Hiramoto, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J035/20 ;
U.S. Cl.
CPC ...
Abstract

A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe ions (Xe) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, Nand NH). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example.


Find Patent Forward Citations

Hiramoto, Tatumi. (2005). Extreme uv light source and semiconductor exposure device (U.S. Patent No. 6965117). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6965117

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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