The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Dec. 18, 2003
Dong Su Park, Kyoungki-do, KR;
Tae Hyeok Lee, Kyoungki-do, KR;
Chang Rock Song, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Dong Su Park, Kyoungki-do, KR;
Tae Hyeok Lee, Kyoungki-do, KR;
Chang Rock Song, Kyoungki-do, KR;
Cheol Hwan Park, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.