The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Dec. 27, 2002
Kee Jeung Lee, Seoul, KR;
Byung Seop Hong, Seoul, KR;
Kee Jeung Lee, Seoul, KR;
Byung Seop Hong, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A capacitor in a semiconductor device having a dual dielectric film structure and a fabrication method therefor are disclosed. The capacitor comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of an SiNchloride-free thin film and a TaOthin film, which is formed on the lower electrode, and an upper electrode formed on the dielectric film. Meanwhile, the method for fabricating the capacitor comprises the steps of: forming a lower electrode on a semiconductor substrate, forming a dielectric film of a dual dielectric film structure composed of an SiNthin film and a TaOthin film on the lower electrode, and forming an upper electrode on the dielectric film.