The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Jan. 06, 2003
Kaori Umezawa, Kanagawa-ken, JP;
Norihiko Tsuchiya, Tokyo, JP;
Kaori Umezawa, Kanagawa-ken, JP;
Norihiko Tsuchiya, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for evaluating an SOI layer on an insulating film disposed on a base substrate so as to construct an SOI substrate, includes: measuring a first diffraction intensity distribution of an X-ray beam corresponding to an incident angle formed with the X-ray beam and a front surface of the SOI substrate by irradiating the X-ray beam onto the base substrate; measuring a second diffraction intensity distribution of the X-ray beam for the incident angle formed with the X-ray beam and the front surface of the SOI substrate by irradiating the X-ray beam onto the SOI layer; determining an evaluation diffraction peak corresponding to the SOI layer from the first and the second diffraction intensity distribution; and observing an X-ray topograph by irradiating the X-ray beam on the SOI layer with a second incident beam angle of the evaluation diffraction peak.