The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Dec. 23, 2003
Hideto Tomiie, Kanagawa, JP;
Shinji Satoh, Nagasaki, JP;
Kazumasa Nomoto, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory apparatus capable of attaining a low voltage when writing data, wherein charge injection into an unnecessary portion is not performed when reading, and capable of unifying a threshold voltage level when erasing, comprising a first conductive type semiconductor region, two source/drain regions made by a second conductive type semiconductor, a plurality of dielectric films stacked on a first conductive type semiconductor region between the two source/drain regions, and a gate electrode; wherein the first conductive type semiconductor region between the two source/drain regions includes a first region wherein a channel is formed by an inversion layer of a minority carrier and a second region formed between the first region and a source/drain region on one side of the first region and having higher concentration than that of the first region.