The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Dec. 19, 2003
Jingang Wu, Shanghai, CN;
Amy Liu, Shanghai, CN;
Tony Wang, Shanghai, CN;
Dennis Huang, Shanghai, CN;
Jingang Wu, Shanghai, CN;
Amy Liu, Shanghai, CN;
Tony Wang, Shanghai, CN;
Dennis Huang, Shanghai, CN;
Abstract
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer. The method operates the rapid thermal process using a plurality of production wafers if the first temperature is within a tolerance of a specification temperature.