The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2005

Filed:

Nov. 12, 2003
Applicant:

Yuji Yokoyama, Kawasaki, JP;

Inventor:

Yuji Yokoyama, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/3205 ; H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract

The semiconductor device comprises an interconnection layerformed on a substrate, a cap insulation filmformed on the upper surface of the interconnection layer, and a sidewall insulation film which is formed on the side walls of the interconnection layerand the cap insulation filmand which includes a larger layer number of insulation filmscovering the side wall of the interconnection layerat the side wall of the cap insulation filmthan a layer number of insulation filmsat the side wall of the cap insulation film. Accordingly, the sidewall insulation film can be thickened at the side wall of the interconnection layer, whereby a parasitic capacitance between the interconnection layerand the electrodesadjacent to the interconnection layerthrough the sidewall insulation film can be low.


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