The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Jun. 23, 2003
Cheol Hwan Park, Seoul, KR;
Dong Su Park, Gyeonggi-do, KR;
Tae Hyeok Lee, Gyeonggi-do, KR;
Sang Ho Woo, Gyeonggi-do, KR;
Cheol Hwan Park, Seoul, KR;
Dong Su Park, Gyeonggi-do, KR;
Tae Hyeok Lee, Gyeonggi-do, KR;
Sang Ho Woo, Gyeonggi-do, KR;
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Abstract
A method for forming a device isolation film of a semiconductor device, wherein an annealing process is performed on the oxide film using NH3 prior to the deposition of a liner nitride film and after the deposition of a thermal oxide film on a sidewall of a trench to nitridate the oxide film is disclosed. The method comprises the steps of: (a) sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate; (b) selectively etching the pad nitride film to form a nitride film pattern; (c) etching the pad oxide film and a predetermined thickness of the semiconductor substrate using the nitride film pattern as a hard mask to form a trench; (d) forming a thermal oxide film on the surface of the trench; (e) performing an annealing process under NH3 atmosphere to form an oxide nitride film on the surface of the thermal oxide film; (f) forming a liner nitride film on the entire surface; (g) forming an oxide film filling the trench on the entire surface; and (h) performing a planarization process.