The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jun. 03, 2004
Nathalie Messina, Nice, FR;
Yves Leduc, Roquefort les Pina, FR;
Nathalie Messina, Nice, FR;
Yves Leduc, Roquefort les Pina, FR;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A CMOS bus receiver for converting a reduced voltage swing input signal at an input node to a higher voltage swing output signal at an output node. The receiver includes a first and a second MOS transistor connected in series by their source and drain between a first side and a second side of a power supply, a gate of the first MOS transistor being connected to the input node, the common connection node of the first and second MOS transistors being connected to the output node. A third and a fourth MOS transistor connected in series by their source and drain between the first side of the power supply and the input node are also provided, a gate of the third MOS transistor being connected to the output node, and a gate of the second MOS transistor being connected to the common connection node of the third and fourth MOS transistors. A fifth MOS transistor is provided, connected in series by a source and drain with a diode between the first side of the power supply and the input node, a gate of the fourth MOS transistor being connected to the common connection node of the fifth MOS transistor and the diode. An inverter has an input connected to the output node and an output connected to a gate of the fifth MOS transistor.