The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Sep. 16, 2003
Mehrad Mahanpour, Union City, CA (US);
Mohammad Massoodi, Los Altos, CA (US);
Dokham Phengthirath, San Jose, CA (US);
Mehrad Mahanpour, Union City, CA (US);
Mohammad Massoodi, Los Altos, CA (US);
Dokham Phengthirath, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and type of device for performing passive voltage contrast on a silicon on insulator (SOI) device. A first portion of a substrate of the SOI device may be ground with a dimpler. A second portion of the substrate of the SOI device may be etched using tetramethylammonium hydroxide (TMAH). A third portion of the substrate of the SOI device and a portion of a box insulator of the SOI device may be etched using hydrofluoric (HF) acid. A conductive coating may be applied to the etched portions thereby forming a conductive path from the gate to the substrate if there is a breakdown in the gate oxide. Consequently, the passive voltage contrast technique may be applied to the SOI device to detect a breakdown in the gate oxide which would be illustrated by a bright area in the gate oxide region resulting from the secondary electrons produced.