The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Aug. 01, 2003
Applicants:
Shunpei Yamazaki, Setagaya, JP;
Jun Koyama, Sagamihara, JP;
Setsuo Nakajima, Atsugi, JP;
Naoya Sakamoto, Atsugi, JP;
Inventors:
Shunpei Yamazaki, Setagaya, JP;
Jun Koyama, Sagamihara, JP;
Setsuo Nakajima, Atsugi, JP;
Naoya Sakamoto, Atsugi, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/04 ;
U.S. Cl.
CPC ...
Abstract
There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.