The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jul. 19, 2002
Peter Dirksen, Leuven, BE;
Rene Johan Gerrit Elfrink, Eindhoven, NL;
Casparus Anthonius Henricus Juffermans, Leuven, BE;
Peter Dirksen, Leuven, BE;
Rene Johan Gerrit Elfrink, Eindhoven, NL;
Casparus Anthonius Henricus Juffermans, Leuven, BE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The performance of a scanning electron microscope (SEM) () is determined by scanning, with this SEM, porous silicon surface areas (PS, PS) each having a different average pore size, calculating the Fourier transform spectra (F) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).