The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Oct. 21, 2003
Applicants:
Thomas Hecht, Dresden, DE;
Bernhard Sell, Portland, OR (US);
Annette Saenger, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for production of a metallic or metal-containing layer () by using a pre-cursor on a silicon- or germanium-containing layer, of, in particular, an electronic component, whereby an intermediate layer is applied to the silicon- or germanium-containing layer before the use of the pre-cursor. Said intermediate layer forms a diffusion barrier for at least those elements or the pre-cursor which would etch the silicon- or germanium-containing layer and is itself resistant to etching by the pre-cursor.