The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Nov. 05, 2004
Satoshi Inagaki, Kawasaki, JP;
Satoshi Inagaki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device includes the steps depositing a metal film on a silicon substrate so as to cover a polysilicon gate electrode and a diffusion region on the silicon substrate, forming a silicide layer by causing a reaction between a surface of the polysilicon gate electrode and the metal film and between a surface of the diffusion region and the metal film, and removing the metal film after the step of forming the silicide layer, wherein there is provided, before the deposition step of the metal film, a step of removing a native oxide film from a surface of the polysilicon gate electrode and a surface of the diffusion region, and wherein there is provided, after the step of removing the native oxide film, the step of forming a chemical oxide film on the surface of the polysilicon gate electrode and the surface of the diffusion region.