The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Aug. 18, 2003
Hiroyasu Ito, Nagoya, JP;
Toshimasa Yamamoto, Ama-gun, JP;
Hiroyasu Ito, Nagoya, JP;
Toshimasa Yamamoto, Ama-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
A semiconductor device, which can prevent a current capability from deteriorating with time, is disclosed. A P-channel type LDMOS is formed in an N-type monocrystal silicon substrate. The P-channel type LDMOS includes: a P-type impurity diffusion layer formed in a well shape so as to reach a predetermined depth; a channel well layer formed by double-diffusing N-type impurities; a source diffusion layer; a potential fixing electrode; drain-contact electrode; a LOCOS oxide film; a gate electrode; a drain electrode; a source electrode; and so on. Especially, the gate electrode is formed so as to overlap onto the LOCOS oxide film, and its protrusion amount onto the LOCOS oxide film (gate overlap length O/L) is set to about 10 μm, which is substantially ½ of a width size of the LOCOS oxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile