The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2005

Filed:

Jun. 25, 2003
Applicants:

Wen-rung Huang, Tainan, TW;

Yuan-chi Lin, Tao-Yuan, TW;

Ching-chung Cheng, Tao-Yuan, TW;

Sheng-chi Lee, Taipei, TW;

Inventors:

Wen-Rung Huang, Tainan, TW;

Yuan-Chi Lin, Tao-Yuan, TW;

Ching-Chung Cheng, Tao-Yuan, TW;

Sheng-Chi Lee, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ;
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for improving the adhesion capability between the π-type bus electrode and ITO (indium tin oxide) transparent conductive layer. The method includes an ITO transparent conductive layer as an ITO electrode is formed on the glass substrate by sputtering method. Then, a photoresist layer with a cavity pattern is formed on the portion of the ITO transparent conductive film. Next, an etching process is used to remove portion of the ITO transparent conductive film to form a cavity within the ITO transparent conductive film. Then, after removing the photoresist layer, a silver paste as a bus electrode is formed on the glass substrate and on the ITO transparent conductor film to form a pi (π) type bus electrode by print method. Due to the pi side of the pi-type electrode is formed on the cavity thereby the adhesion capability between the pi-type bus electrode and exposed glass substrate within the cavity, such that the adhesion capability between the π type bus electrode and ITO conductive film can be improved. Thus, the edge warp phenomenon of the π type bus electrode can be diminished.


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