The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jul. 01, 2002
Osamu Matsumoto, Miyagi, JP;
Shinichi Ansai, Miyagi, JP;
Satoru Kijima, Miyagi, JP;
Sony Corporation, , JP;
Abstract
A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.