The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Jan. 29, 2004
Seong Rae Lee, Seoul, KR;
Chul Min Choi, Seoul, KR;
Jong Soo Kim, Incheon, KR;
Jin OH Song, Seoul, KR;
Sung Min Park, Seoul, KR;
Dong Hwan Kim, Seoul, KR;
Seong Rae Lee, Seoul, KR;
Chul Min Choi, Seoul, KR;
Jong Soo Kim, Incheon, KR;
Jin Oh Song, Seoul, KR;
Sung Min Park, Seoul, KR;
Dong Hwan Kim, Seoul, KR;
Korea Chungang Educational Foundation, Seoul, KR;
Abstract
Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is formed of amorphous ZrAl(0<x<1) or ZrAlO(0<x<1, 0<y<1). In a tunneling magnetoresistance (TMR) device, a tunneling barrier layer is formed of at least one selected from the group consisting of ZrAlO(0<x<1, 0<y<1), TiAlO(0<x<1, 0<y<1), and NbAlO(0<x<1, 0<y<1).