The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Feb. 21, 2003
Andrew John Merriam, San Francisco, CA (US);
Andrew John Merriam, San Francisco, CA (US);
Actinix, Scotts Valley, CA (US);
Abstract
A method and apparatus for high-efficiency stimulated Raman Stokes and anti-Stokes scattering is described. A dual-Raman scattering cell configuration is disclosed. A variable pressure of the first Raman cell causes a controllable pressure shift of the Raman-active two-photon transition. The frequency-shifted Stokes radiation generated in the first Raman cell, along with the residual pump laser radiation, is applied to a second Raman cell whose pressure is adjusted to maximize production of the anti-Stokes sidebands. By the steps of applying the first Stokes sideband 'injection' signal, and controlling its frequency via the pressure difference of the two Raman cells, and its intensity by appropriate focussing, the process of Raman scattering may be significantly enhanced over the techniques of the prior art. These techniques are of especial interest to the production of intense, coherent, short-wavelength radiation, especially when only a single pump laser frequency is available.