The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2005

Filed:

Feb. 06, 2002
Applicants:

Vladimir I. Merkulov, Knoxville, TN (US);

Anatoil V. Melechko, Knoxville, TN (US);

Michael A. Guillorn, Knoxville, TN (US);

Douglas H. Lowndes, Knoxville, TN (US);

Michael L. Simpson, Knoxville, TN (US);

Inventors:

Vladimir I. Merkulov, Knoxville, TN (US);

Anatoil V. Melechko, Knoxville, TN (US);

Michael A. Guillorn, Knoxville, TN (US);

Douglas H. Lowndes, Knoxville, TN (US);

Michael L. Simpson, Knoxville, TN (US);

Assignee:

UT-Battelle LLC, Oak Ridge, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J001/62 ;
U.S. Cl.
CPC ...
Abstract

Systems and methods are described for controlled non-normal alignment of catalyticaly grown nanostructures in a large-scale synthesis process. A method includes: generating an electric field proximate an edge of a protruding section of an electrode, the electric field defining a vector; and forming an elongated nanostructure located at a position on a surface of a substrate, the position on the surface of the substrate proximate the edge of the protruding section of the electrode, at least one tangent to the elongated nanostructure i) substantially parallel to the vector defined by the electric field and ii) substantially non-parallel to a normal defined by the surface of the substrate.


Find Patent Forward Citations

Loading…