The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Feb. 03, 2004
Applicants:
Yider Wu, Campbell, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Inventors:
Yider Wu, Campbell, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Bin Yu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/788 ;
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device includes a substrate, an insulating layer, a fin, a conductive structure and a control gate. The insulating layer may be formed on the substrate and the fin may be formed on the insulating layer. The conductive structure may be formed near a side of the fin and the control gate may be formed over the fin. The conductive structure may act as a floating gate electrode for the non-volatile memory device.