The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Oct. 26, 2001
Applicants:
Arkalgud Sitaram, Fishkill, NY (US);
Christine Dehm, Nürnberg, DE;
Carlos Mazuré-espejo, St. Nazaire les Eymes, FR;
Inventors:
Arkalgud Sitaram, Fishkill, NY (US);
Christine Dehm, Nürnberg, DE;
Carlos Mazuré-Espejo, St. Nazaire les Eymes, FR;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
A continuous contact hole is formed in an insulation layer that separates a storage capacitor from a switching transistor. All except a section of the contact hole is filled with poly-Si. A conductive, oxidizable interlayer and a conductive oxygen barrier layer are deposited on the Poly-Si in the remaining section of the contact hole such that the interlayer is completely surrounded by the poly-Si of the contact hole, the insulation layer, and the barrier layer.