The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 07, 2002
David Todd Emerson, Durham, NC (US);
James Ibbetson, Golota, CA (US);
Michael John Bergmann, Durham, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Michael John O'loughlin, Chapel Hill, NC (US);
Howard Dean Nordby, Jr., Pittsboro, NC (US);
Amber Christine Abare, Cary, NC (US);
David Todd Emerson, Durham, NC (US);
James Ibbetson, Golota, CA (US);
Michael John Bergmann, Durham, NC (US);
Kathleen Marie Doverspike, Apex, NC (US);
Michael John O'Loughlin, Chapel Hill, NC (US);
Howard Dean Nordby, Jr., Pittsboro, NC (US);
Amber Christine Abare, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InGaN and InGaN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.