The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Dec. 15, 2003
Chun-yao Huang, Hsinchu, TW;
Cheng-chung Chen, Yilan Hsien, TW;
Yu-wu Wang, Chu Pei, TW;
Chen-ming Chen, Taichung, TW;
Huai-yuan Tseng, Ping Jeng, TW;
Chun-Yao Huang, Hsinchu, TW;
Cheng-Chung Chen, Yilan Hsien, TW;
Yu-Wu Wang, Chu Pei, TW;
Chen-Ming Chen, Taichung, TW;
Huai-Yuan Tseng, Ping Jeng, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.