The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Dec. 13, 2001
Applicants:
Kyong-min Kim, Ichon-shi, KR;
Han-sang Song, Ichon-shi, KR;
Inventors:
Kyong-Min Kim, Ichon-shi, KR;
Han-Sang Song, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/31 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a TaOdielectric layer by using an atomic layer deposition (ALD) method and an in-situ plasma treatment. The method includes steps of: a) depositing a TaOdielectric layer on a substrate; b) performing a plasma treatment using NO gas; c) repeating the steps of a) and b) at least one time; and d) annealing the TaOdielectric layer for the crystallization of the TaOdielectric layer.