The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 20, 2004
Applicant:
Shinichi Fukada, Hamura, JP;
Inventor:
Shinichi Fukada, Hamura, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01I021/44 ;
U.S. Cl.
CPC ...
Abstract
The invention provides a method for manufacturing a semiconductor device by which product performance and working efficiency can be improved while increasing a capacitor area of cross-point FeRAM. By using a first mask formed on a lower electrode layer forming film, a lower electrode is formed and processed and the lower electrodeA can be exposed on a first insulating layer. By using a second mask formed on an upper electrode supporting layer forming film, a ferroelectric layer and an upper electrode supporting layer can be formed and processed and the upper electrode supporting layer can be exposed on a second insulating layer.