The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 17, 1999
Applicants:
Thomas Huttner, Marktoberdorf, DE;
Helmut Wurzer, Dresden, DE;
Reinhard Mahnkopf, München, DE;
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor configuration has a base layer made of semiconductor material and formed, in particular, by a substrate. An insulation layer is arranged above the base layer, and a layer made of monocrystalline silicon adjoins the insulation layer. A passivating substance is present, with the formation of Si—X bonds, in the region of the interface between the insulation layer and the monocrystalline silicon layer. The bond energy of the Si—X bond is greater than the bond energy of an Si—H bond.