The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Aug. 18, 2003
Manabu Kojima, Kawasaki, JP;
Manabu Kojima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiOfilm and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiOfilm and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.