The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
Aug. 04, 2003
James Pan, San Jose, CA (US);
Ning Cheng, Cupertino, CA (US);
Christy Mein Chu Woo, Cupertino, CA (US);
James Pan, San Jose, CA (US);
Ning Cheng, Cupertino, CA (US);
Christy Mein Chu Woo, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention relates to methods of fabricating dual-level flash memory cells. A first active region and a second active region are formed in a substrate. A trench is formed in the substrate between the first active region and the second active region. A first insulator dielectric is formed on the substrate and within the trench forming a vertical structure. A first poly layer is formed on the first insulator dielectric. A second insulator dielectric is formed on at least a portion of the first poly layer. A second poly layer is formed on the second insulator dielectric.