The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2005

Filed:

Sep. 20, 2000
Applicants:

Yasuhiko Nomura, Moriguchi, JP;

Nobuhiko Hayashi, Osaka, JP;

Masayuki Shono, Hirakata, JP;

Inventors:

Yasuhiko Nomura, Moriguchi, JP;

Nobuhiko Hayashi, Osaka, JP;

Masayuki Shono, Hirakata, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/22 ;
U.S. Cl.
CPC ...
Abstract

A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.


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