The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2005

Filed:

Dec. 03, 2002
Applicants:

Erwin A. Hijzen, Blanden, BE;

Michael A. A. In't Zandt, Veldhoven, NL;

Raymond J. E. Hueting, Helmond, NL;

Inventors:

Erwin A. Hijzen, Blanden, BE;

Michael A. A. In't Zandt, Veldhoven, NL;

Raymond J. E. Hueting, Helmond, NL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ;
U.S. Cl.
CPC ...
Abstract

In semiconductor devices which include an insulated trench electrode () in a trench (), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity () is provided between the bottom () of the trench electrode () and the bottom () of the trench () to reduce the dielectric coupling between the trench electrode () and the body portion at the bottom () of the trench in a compact manner. In power transistors, the reduction in dielectric coupling reduces switching power losses, and in Schottky diodes, it enables the trench width to be reduced.


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