The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2005

Filed:

Nov. 12, 2003
Applicants:

Xiaochun Zhu, Pittsburgh, PA (US);

Jian-gang Zhu, Pittsburgh, PA (US);

Inventors:

Xiaochun Zhu, Pittsburgh, PA (US);

Jian-Gang Zhu, Pittsburgh, PA (US);

Assignee:

Carnegie Mellon University, Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract

Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A non-magnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.


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