The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Jun. 11, 2003
Kelly C. Casey, Flower Mound, TX (US);
Elmer L. Turner, Jr., Grapevine, TX (US);
Kelly C. Casey, Flower Mound, TX (US);
Elmer L. Turner, Jr., Grapevine, TX (US);
Teccor Electronics, LP, Irving, TX (US);
Abstract
A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.