The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Nov. 28, 2000
Thomas Herman, Manhattan Beach, CA (US);
Thomas Herman, Manhattan Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A power MOSFET die with a minimized figure of merit has of a planar stripe MOSFET geometry in which parallel diffused bases (or channels) are formed by implantation and diffusion of impurities through parallel elongated and spaced polysilicon stripes wherein the polysilicon line width is from about 3.2 to 3.4 microns, preferably 3.4 microns; the polyline spacing is from about 1 to 4 microns, preferably 1.5 microns and the diffused bases are spaced by greater than about 0.8 microns. The polysilicon stripes act as masks to the sequential formation of first base stripes, the source stripes and second higher concentration base stripes which are deeper than the first base stripes. Insulation side wall spacers are used to define a contact etch for the source contact. The above design geometry is used for both the forward control MOSFET and the synchronous rectifier MOSFET of a buck converter circuit.