The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6955858 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 18, 2005

Filed:

Dec. 06, 2002
Applicants:

Nadia A. Elmasry, Raleigh, NC (US);

Salah M. Bedair, Raleigh, NC (US);

Meredith L. Reed, Garner, NC (US);

Hans Stadelmaier, Raleigh, NC (US);

Inventors:

Nadia A. ElMasry, Raleigh, NC (US);

Salah M. Bedair, Raleigh, NC (US);

Meredith L. Reed, Garner, NC (US);

Hans Stadelmaier, Raleigh, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B009/00 ; C30B029/38 ; C30B029/40 ;
U.S. Cl.
CPC ...
Abstract

Transition metal doped II–V nitride material films exhibit ferromagnetic properties at or above room temperature. A III–V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state diffusion processes. Doping of the III–V nitride material films may proceed in the absence of hydrogen and/or in the presence of nitrogen. In some embodiments, transition metal-doped III–V nitride material films comprise carbon concentrations of at least 10atoms per cubic centimeter.


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ElMasry, Nadia. (2005). Transition metal doped ferromagnetic iii-v nitride material films and methods of fabricating the same (U.S. Patent No. 6955858). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6955858

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