The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Apr. 30, 2003
Applicant:
Arjang Fartash, Corvallis, OR (US);
Inventor:
Arjang Fartash, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C016/00 ;
U.S. Cl.
CPC ...
Abstract
A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.
Fartash, Arjang. (2005). Method for forming compressive alpha-tantalum on substrates and devices including the same (U.S. Patent No. 6955835). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6955835
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile