The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Jul. 18, 2003
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Denis V. Tsvetkov, Gaithersburg, MD (US);
Aleksei Pechnikov, North Potomac, MD (US);
Yuri V. Melnik, Rockville, MD (US);
Aleksandr Usikov, Silver Spring, MD (US);
Oleg Kovalenkov, Gaithersburg, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Denis V. Tsvetkov, Gaithersburg, MD (US);
Aleksei Pechnikov, North Potomac, MD (US);
Yuri V. Melnik, Rockville, MD (US);
Aleksandr Usikov, Silver Spring, MD (US);
Oleg Kovalenkov, Gaithersburg, MD (US);
Technologies and Devices, Inc., Silver Springs, MD (US);
Abstract
A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.