The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Aug. 06, 2004
Tsuyoshi Ono, Tenri, JP;
Masahiko Watanabe, Ikoma, JP;
Tsuyoshi Ono, Tenri, JP;
Masahiko Watanabe, Ikoma, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This invention provides a programming method of a nonvolatile semiconductor device capable of programming multi-value data of three or more values rapidly. If between two threshold voltage ranges corresponding to respective memory states before and after programming, at least one threshold voltage range corresponding to other memory states exists in a programming target memory cell, a first programming step of applying at least one first program gate voltage corresponding to at least one of other memory states and a predetermined program drain voltage to a programming target memory cell is executed, then a second programming step of applying a second program gate voltage corresponding to a programmed state after programming and a predetermined program drain voltage is executed, and thereafter a verification step of verifying whether or not a program is made in a programming target memory cell is executed.