The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Nov. 18, 2002
Shoichiro Matsumoto, Ogaki, JP;
Keiichi Sano, Gifu, JP;
Shoichiro Matsumoto, Ogaki, JP;
Keiichi Sano, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
A semiconductor device for individually controlling an element to be driven, such as an electroluminescence element, includes a switching TFT which operates when a selection signal is applied to its gate and which also captures a data signal, and an element-driving TFT in which its drain is connected with a drive power source, its source is connected with the element to be driven, gate receives a data signal supplied from the switching TFT, for controlling electric power supplied from the drive power source to the element to be driven. The semiconductor device further includes a storage capacitor having a first electrode connected with the switching TFT and with the gate of the element-driving TFT and a second electrode connected between the source of the element-driving TFT and the element to be driven, for holding the gate-source voltage of the element-driving TFT in accordance with the data signal, and a switching element for controlling the potential of the second electrode of the storage capacitor. With such a configuration, all the above-described switches can be formed by TFTs of the same conductivity type and reliable supply of electric power to the element to be driven can be assured.