The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2005

Filed:

Oct. 07, 2003
Applicants:

Kwang-hee Lee, Suwon, KR;

Kyeong-tae Moon, Gyeonggi-do, KR;

Inventors:

Kwang-Hee Lee, Suwon, KR;

Kyeong-Tae Moon, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M001/66 ; H01L029/739 ; H01L027/10 ;
U.S. Cl.
CPC ...
Abstract

The present invention discloses a transistor array and a layout method, the array including a plurality of first LSB transistors arranged along diagonal directions of a central portion of a first quadrant of an array including a plurality of rows and a plurality of columns; a plurality of first MSB transistors arranged along diagonal directions above and below the plurality of first LSB transistors, respectively; a plurality of second LSB transistors and a plurality of second MSB transistors arranged on a second quadrant of the array to be symmetrical in a Y-axis direction to the plurality of first LSB transistors and the plurality of first MSB transistors; a plurality of third LSB transistors and a plurality of third MSB transistors arranged on a third quadrant of the array to be symmetrical in an X-axis direction to the plurality of first LSB transistors and the plurality of first MSB transistors; and a plurality of fourth LSB transistors and a plurality of fourth MSB transistors arranged on a fourth quadrant of the array to be symmetrical in a Y-axis direction to the plurality of third LSB transistors and the plurality of third MSB transistors, such that the transitor array can minimize the effects of temperature distribution and process variation.


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