The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Mar. 08, 2004
Wei-chou Hsu, Tainan, TW;
Ching-sung Lee, Taichung, TW;
Wei-Chou Hsu, Tainan, TW;
Ching-Sung Lee, Taichung, TW;
National Cheng Kung University, Tainan, TW;
Abstract
An InGaAs/GaAs High Electron Mobility Transistor (HEMT) comprises a buffer layer, a main conducting channel, an InGaAs/GaAs thickness-graded superlattice structure, a mono atom δ-doped carrier supply layer, a Schottky cap layer of gate electrode and an Ohmic cap layer of drain electrode and source electrode which are formed successively on a substrate. The superlattice structure comprises spacer and sub-channel. By using thickness-graded superlattice spacer structure is able to ameliorate lattice-mismatch-induced scattering within heterostucture interfacial, increase range of gate voltage swing in gate electrode, and through real-space transfer generated by bias voltage in high electric field, drain-to-source saturation current proceed step-up phenomenon to forming a HEMT having scalable voltage multi-extrinsic transconductance enhanced portions.