The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Dec. 29, 2003
Shigeo Yoshii, Hirakata, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Asamira Suzuki, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Shigeo Yoshii, Hirakata, JP;
Nobuyuki Otsuka, Kawanishi, JP;
Koichi Mizuno, Nara, JP;
Asamira Suzuki, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A plasma oscillation switching device of the present invention comprises semiconductor substrate; first barrier layerthat is composed of a III-V compound semiconductor and formed on the substrate; channel layerthat is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layerthat is composed of a III-V compound semiconductor and formed on the channel layer; source electrode, gate electrodeand drain electrodeprovided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer, the second barrier layer includes p-type diffusion layer, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer