The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Jul. 15, 2004
Jeong-hoon Ahn, Gwacheon-si, KR;
Hyo-jong Lee, Seoul, KR;
Kyung-tae Lee, Seoul, KR;
Kyoung-woo Lee, Seoul, KR;
Soo-geun Lee, Suwon-si, KR;
Bong-seok Suh, Suwon-si, KR;
Jeong-hoon Ahn, Gwacheon-si, KR;
Hyo-jong Lee, Seoul, KR;
Kyung-tae Lee, Seoul, KR;
Kyoung-woo Lee, Seoul, KR;
Soo-geun Lee, Suwon-si, KR;
Bong-seok Suh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A metal interconnection structure includes a lower metal interconnection layer disposed in a first inter-layer dielectric layer. An inter-metal dielectric layer having a via contact hole that exposes a portion of surface of the lower metal layer pattern is disposed on the first inter-layer dielectric layer and the lower metal layer pattern. A second inter-layer dielectric layer having a trench that exposes the via contact hole is formed on the inter-metal dielectric layer. A barrier metal layer is formed on a vertical surface of the via contact and the exposed surface of the second lower metal interconnection layer pattern. A first upper metal interconnection layer pattern is disposed on the barrier metal layer, thereby filling the via contact hole and a portion of the trench. A void diffusion barrier layer is disposed on the first metal interconnection layer pattern and a second upper metal interconnection layer pattern is disposed on the void diffusion barrier layer to completely fill the trench.